Product Summary

The P2503NPG is an N- & P-Channel Enhancement Mode Field Effect Transistor.

Parametrics

P2503NPG absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current ID: 7 A; (4)Pulsed Drain Current1 IDM: 20 A; (5)Avalanche Current IAS 18 A; (6)Avalanche Energy EAS 19 mJ; (7)Power Dissipation PD: 2.5 W; (8)Junction & Storage Temperature Range Tj, Tstg: -55 to 150 ℃.

Features

P2503NPG electrical characteristics: (1)Drain-Source Breakdown Voltage V(BR)DSS: 30 V; (2)Gate Threshold Voltage VGS(th): 1 V; (3)Gate-Body Leakage IGSS: ±100nA; (4)Zero Gate Voltage Drain Current IDSS: 1μA; (5)On-State Drain Current ID(ON): 20A.

Diagrams

P2503NPG diagram

P2500AA61L
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Data Sheet
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1390-2000: $0.46
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Data Sheet
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Data Sheet
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