(Hong Kong)
Product Summary
The MRF154 is an n-channel broadband RF power MOSFET designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
Parametrics
MRF154 maximum ratings: (1)Drain–Source Voltage, VDSS: 125 Vdc; (2)Drain–Gate Voltage, VDGO: 125 Vdc; (3)Gate–Source Voltage, VGS: ±40 Vdc; (4)Drain Current — Continuous, ID: 60 Adc; (5)Total Device Dissipation @ TC = 25℃, PD: 1350 w; Derate above 25℃: 7.7 W/℃; (6)Storage Temperature Range, Tstg: –65 to +150 ℃; (7)Operating Junction Temperature, TJ: 200 ℃.
Features
MRF154 characteristics at 50 Volts, 30 MHz: (1)Output Power = 600 Watts; (2)Power Gain = 17 dB (Typ); (3)Efficiency = 45% (Typ).
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF154 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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Quantity | ||||||||||
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MRF1.6/5.6 |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-2.5C |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-59U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-BCUPA |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LPJ-179U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LR-PC-1 |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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