AT49F4096A-70TC

5-volt, 4-megabit Flash Memory, 524,288 words of 8 bits, 55 ns, 50 mA, 10,000 Write Cycles

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PartNumber:: AT49F4096A-70TC

Brand:: ATMEL Corporation - ATMEL | Pack: TSOP | D/C: 10+

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Products Upload time: 2012-04-25

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Part Number:AT49F4096A-70TC
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Product Summary

The AT49F4096A-70TC is a kind of 5-volt, 4-megabit Flash Memory organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT49F4096A-70TC offers access times to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 mA. The AT49F4096A-70TC contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49F4096A-70TC locates the boot block at lowest order addresses (“bottom boot”); the AT49F4096A-70TC locates it at highest order addresses (“top boot”). In addition, the AT49F4096A-70TC is erased by executing the erase command sequence; the device internally controls the erase operation.The memory is divided into four blocks for erase operations.There are two 4K word parameter block sections, the boot block, and the main memory array block.

Parametrics

AT49F4096A-70TC (1)Temperature Under Bias: -55℃ to +125℃ ; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on RESET with Respect to Ground: -0.6V to +13.5V.

Features

AT49F4096A-70TC features: (1)Single Voltage Operation: 5V Read; 5V Programming; (2)Fast Read Access Time - 55 ns; (3)Internal Erase/Program Control; (4)Sector Architecture: One 8K Words (16K bytes) Boot Block with Programming Lockout; Two 4K Words (8K bytes) Parameter Blocks; One 240K Words (480K bytes) Main Memory Array Block; (5)Fast Sector Erase Time - 10 seconds; (6)Byte-by-Byte or Word-By-Word Programming - 10 ms Typical; (7)Hardware Data Protection; (8)DATA Polling For End Of Program Detection; (9)Low-Power Dissipation: 50 mA Active Current; 300 mA CMOS Standby Current; (10)Typical 10,000 Write Cycles.