(Hong Kong)
Product Summary
The 2SA1316-GR is a PNP silicon transistor of epitaxial type.
Parametrics
2SA1316-GR absolute maximum ratings: (1)collector to base voltage: 80V; (2)emitter to base voltage: -5V; (3)collector to emitter volatge: -80V; (4)base current: -20mA; (5)collector current: -100mA; (6)collector power dissipation: 400mW; (7)junction temperature: +125; (8)storage temperature: -55 to +125.
Features
2SA1316-GR features: (1)low pulse noise. low 1/f noise; (2)low base spreading resistance: rbb=2.0; (3)complementary to 2SC3329.
Diagrams
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 2SA1006 |
Other |
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Data Sheet |
Negotiable |
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2SA1006A |
Other |
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Data Sheet |
Negotiable |
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2SA1006B |
Other |
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Data Sheet |
Negotiable |
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2SA1008 |
Other |
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Data Sheet |
Negotiable |
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2SA1009 |
Other |
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Data Sheet |
Negotiable |
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2SA1009A |
Other |
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Data Sheet |
Negotiable |
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