Product Summary

The FDV302P P-Channel logic level enhancement mode field effect transistor is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The FDV302P has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.

Parametrics

FDV302P absolute maximum ratings: (1)Drain-Source Voltage: -25 V; (2)Gate-Source Voltag: -8 V; (3)Drain Current: Continuous, -0.12 A; Pulsed, 0.5; (4)Maximum Power Dissipation: 0.35 W; (5)Operating and Storage Temperature Range: -55 to 150℃; (6)Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm): 6.0 kV.

Features

FDV302P features: (1)-25 V, -0.12 A continuous, -0.5 A Peak, RDS(ON) = 13 W @ VGS= -2.7 V; RDS(ON)= 10 W @ VGS = -4.5 V; (2)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V; (3)Gate-Source Zener for ESD ruggedness; (4)>6kV Human Body Model; (5)Compact industry standard SOT-23 surface mount package; (6)Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.

Diagrams

FDV302P dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDV302P
FDV302P
Fairchild Semiconductor
MOSFET Digital FET P-Ch
Data Sheet
0-1: $0.22
1-25: $0.20
25-100: $0.11
100-250: $0.07
FDV302P_D87Z
FDV302P_D87Z
Fairchild Semiconductor
MOSFET Digital FET P-Ch
Data Sheet
Negotiable 
FDV302P_NB8V001
FDV302P_NB8V001
Fairchild Semiconductor
MOSFET Digital FET P-Ch
Data Sheet
0-1: $0.12
1-25: $0.11
25-100: $0.09
100-250: $0.07
FDV302P_Q
FDV302P_Q
Fairchild Semiconductor
MOSFET Digital FET P-Ch
Data Sheet
Negotiable