(Hong Kong)
Product Summary
The BU2527DX is the new generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.
Parametrics
BU2527DX absolute maximum ratings: (1)Collector-emitter voltage peak value, VBE = 0 V:1500 V; (2)Collector-emitter voltage (open base): 800 V; (3)Collector current (DC): 12 A; (4)Collector current peak value: 30 A; (5)Base current (DC): 8 A; (6)Base current peak value: 12 A; (7)Reverse base current: average over any 20 ms period, 200 mA; (8)Reverse base current peak value: 7A; (9)power dissipation: Ths ≤ 25℃, 45 W; (10)Storage temperature: -65 to 150℃; (11)Junction temperature: - 150℃.
Features
BU2527DX features: improved RBSOA performance.
Diagrams
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 BU2527DX |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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