(Hong Kong)
Product Summary
The BFG541 is the NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones(CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV MATV/CATV amplifiers and repeate amplifiers in fibre-optic systems. The BFG541is mounted in a plastic SOT223 envelope.
Parametrics
BFG541 absolute maximum ratings: (1)collector-base voltage, open emitter: 20 V; (2)collector-emitter voltage, RBE =0: 15 V; (3)emitter-base voltage, open collector: 2.5 V; (4)DC collector current: 120 mA; (5)total power dissipation, up to Ts = 140 ℃; note 1: 650 mW; (6)storage temperature: -65 to 150℃; (7)junction temperature: 175℃.
Features
BFG541 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BFG541 |
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Negotiable |
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BFG541,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 15V 9GHZ |
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